Effect of annealing on the properties of electroplated copper in TSV
In order to solve the problem that the small crystal size after copper filling in through-silicon via(TSV)high aspect ratio via microhole electroplating,which may lead to grain boundary defects after high temperature process,the properties of TSV electroplated copper film after annealing were studied.The effects of annealing conditions such as annealing temperature and heating rate on the grain plane orientation,grain size,grain boundary micro void,and impurity content of the film were investigated.The optimal annealing process parameters were determined to be a heating rate of 10 ℃/min and a holding time of 2 h at 400 ℃.The results indicate that under these optimal high-temperature annealing conditions,XRD results show that the preferred orientation of the main crystal plane is Cu(111).SIMS analysis shows that the total impurity content of the electroplated copper film is less than 100 mg·kg-1.EBSD results show that the average particle size of electroplated copper is 1.9 μm.The grain growth is sufficient to meet the needs of industrial applications,which would provide reference for industrial applications.
万方数据
维普
