Research on overvoltage suppression method of medium voltage DC solid state circuit breaker based on MOV-RC snubber circuit
This article optimizes the design of the medium-voltage DC Solid State Circuit Breaker (SSCB) snubber circuit based on normally-on Silicon Carbide (SiC) junction field-effect transistor (JFET) .First,considering the factors such as parasitic inductance inside the medium-voltage SiC SSCB main switch SiC JFET device,printed cir-cuit board inductance,and power circuit inductance,RCD-type,MOV-type,and RCD+MOV hybrid-type three typical snubber circuits applied to SiC SSCB are analyzed for their operation principles and performance evaluation.Based on this,a MOV-RC snubber circuit design suitable for SiC SSCB is proposed,and the operation principle and parameter design method of the circuit are described in detail.Finally,a 1.5 kV/38 A SSCB experimental prototype based on three 1200 V/38 A normally-on SiC JFET devices in series was built to verify the effectiveness of the snubber circuit design scheme.The simulation and experimental results show that the snubber circuit design scheme not only effectively suppresses overvoltage during SiC SSCB fault isolation,but also has the advantages of fast fault clearance time and low cost.
SiC SSCBovervoltageJFETsnubberparasitic inductance