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基于空间多点位温度IGBT器件参数逆推的健康状态在线监测方法

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绝缘栅双极型晶体管(IGBT)作为高压大功率能量转换系统的核心器件,已广泛应用于新能源发电、高速铁路、航空航天等领域,由于工作环境和运行工况的复杂多变,IGBT 模块极易因键合线剥离和焊料层脱落等疲劳老化而失效,造成系统停机,开展 IGBT 模块健康状态的在线监测是提升功率器件可靠性、实现能量转换系统安全高效运行的重要保障.该文提出一种基于空间多点位温度 IGBT 器件参数逆推的健康状态在线监测方法,实现 IGBT 键合线和焊料层热疲劳损伤的在线监测和诊断,避免 IGBT 模块因热损伤累积超过安全阈值而突发失效,提升能量转换系统的可靠性.首先,考虑焊料层老化对模块内部热流路径的影响而引起基板空间多点位温度分布的改变,建立基于基板多点位温度差异度(∇TP)的焊料层疲劳老化在线监测模型,通过离线加速老化测试方法建立∇TP和芯片至基板热阻抗(ZJC)的数据库,在应用中通过∇TP调用(ZJC)实现焊料层健康状态的在线诊断;其次,建立 IGBT混合老化模式下器件通态功率损耗的计算模型,提出基于通态损耗的集-射通态电压(Vce-on)的逆向计算方法,基于更新的ZJC值计算芯片结温(TJ),将集电极电流IC和TJ输入健康IGBT模块的IC-TJ-Vce-on数据库中调用当前结温下的Vce-on,data,消除焊料层老化引起的结温上升对Vce-on的影响,基于Vce-on和Vce-on,data的偏差对键合线老化状态做出诊断.仿真和实验结果表明所提方法的有效性,在实验环境下诊断误差约为 3%.
On-Line Condition Monitoring of IGBT Module Based on Parameter Inversion of Spatial Multi-Point Temperature
As the core component of high voltage and high power energy conversion systems,the insulated gate bipolar transistor(IGBT)has been widely used in new energy power generation,high-speed railways,aerospace,and other fields.Due to the complex and various working environments and operation conditions,large temperature fluctuations arise during the operation of the IGBT module.Considering that the thermal expansion coefficient of each layer for the module is different,thermal mechanical stress is generated between each layer.Continuous temperature fluctuation produces cyclic thermal stress,resulting in thermal damage to materials in each layer.When the accumulation of thermal damage exceeds the safety threshold,the IGBT module will suddenly fail and eventually cause the shutdown of the energy conversion system.According to the reliability research report of power electronic systems,about 34%of energy conversion system failures are attributed to the failure of power devices such as IGBTs.Therefore,from the reliability perspective,online health condition monitoring of the IGBT module has become a significant guarantee of improving the operational reliability of the energy conversion system.This paper proposes an online health monitoring method based on parameter inversion of spatial multi-point temperature to realize thermal damage diagnosis for IGBT's bond wires and solder layer.This method can avoid the sudden failure of the IGBT module due to the accumulation of thermal damage exceeding the safety threshold,improving the reliable performance of the energy conversion system.Firstly,considering the influence of solder layer aging on the heat flow path inside the module,the temperature distribution of multiple points on the baseplate is changed.The selected multi-point baseplate temperature is collected by placing a temperature sensor between the baseplate and the heatsink.An online monitoring model of solder aging is establishedbased on the multi-point temperature difference of baseplate(∇TP).The databases of ∇T P and chip-to-substrate thermal impedance(ZJC)are established by an offline accelerated aging test method.In the application,ZJC is called by ∇T P to realize an online diagnosis of solder layer health status.Secondly,the calculation model of conduction power loss in hybrid aging mode is established.Accordingly,the inverse calculation algorithm of on-state collector-emitter voltage Vce-on based on conduction power loss is proposed.The chip junction temperature TJ is calculated based on the updated ZJC value,and the collector current IC and TJ are given into the IC-TJ-Vce-on database of the healthy IGBT module to invoke Vce-on,data at the current junction temperature.The influence of junction temperature rise caused by solder aging on Vce-on is eliminated,and the aging state of bond wires is diagnosed based on the deviation of Vce-on and Vce-on,data.Simulation and experimental results show the effectiveness of the proposed method,and the diagnostic error is about 3%under experimental conditions.

Insulated gate bipolar transistor(IGBT)online monitoringreliabilityhealth condition

胡震、崔曼、吴晓华、施涛

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南京邮电大学自动化学院 南京 210042

苏州帝奥电梯有限公司 苏州 215200

北京理工大学信息与电子学院 北京 100081

绝缘栅双极型晶体管(IGBT) 在线监测 可靠性能 健康状态

2025

电工技术学报
中国电工技术学会

电工技术学报

北大核心
影响因子:2.593
ISSN:1000-6753
年,卷(期):2025.40(2)