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光电耦合器二次塑封工艺的实验结果分析与理论研究

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针对二次塑封工艺对光电耦合器性能影响的研究尚不完善的问题,对MSL1 级环境下的二次塑封的光耦封装效果进行实验和有限元仿真研究.利用超声扫描显微镜等实验设备,对回流焊、内点胶、环氧塑封料和等离子清洗四种工艺下光电耦合器塑封器件的分层情况进行分析,测试电流传输比,并对环氧塑封料应力参数对分层的影响进行研究,从而优化二次塑封封装工艺条件.研究结果表明回流焊峰值温度设置在Tp=245℃到Tp=250℃可以改善分层问题,芯片胶高在0.4 mm以上及 0.3 mm以下会造成光耦严重的分层,采用热应力参数相匹配的塑封料和在二次塑封前增加等离子清洗工艺,清洗功率设置为 300 W,清洗时间为15 s,是改善光耦封装分层的有效措施.
Analysis of Experimental Results and Theoretical Study of Secondary Molding Process of Optocoupler
Aiming at the problem that the research on the influence of secondary plasticizing process on the performance of photocoupler is still imperfect,this paper carries out experimental and finite element simulation research on the effect of photocou-pler encapsulation of secondary plasticizing in MSL1 level environment.Using ultrasonic scanning microscope and other experimental equipment,we analyze the delamination of photocoupler encapsulated devices under four processes of reflow soldering,internal dis-pensing,epoxy encapsulant and plasma cleaning,test the current transfer ratio,and study the effect of epoxy encapsulant stress pa-rameter on delamination,so as to optimize the conditions of the secondary plastic encapsulation process.The results show that the reflow soldering peak temperature set at Tp=245℃to Tp=250℃can improve the delamination problem;the chip adhesive height a-bove 0.4 mm and below 0.3 mm will cause serious delamination of the optocoupler;Using the plastic sealing material matching ther-mal stress parameters and increasing the plasma cleaning process before the secondary plastic sealing,the cleaning power is set to 300 W and the cleaning time is 15 s,which is an effective measure to improve the optocoupler package.

optocouplerpackage delaminationdispensingreflow solderingplasma cleaning

李李、肖雪芳、兰玉平

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厦门理工学院 光电与通信工程学院,福建厦门 361024

厦门华联电子股份有限公司,福建厦门 361008

光电耦合器 封装分层 点胶 回流焊 等离子清洗

福建省自然科学基金

2021J05267

2024

东莞理工学院学报
东莞理工学院

东莞理工学院学报

影响因子:0.265
ISSN:1009-0312
年,卷(期):2024.31(5)