Research on HTO-Based LDMOS Device Structure and Its Hot Carrier Injection Degradation
In order to meet the market demand of medium and low voltage consumer electronics,the small size and high density Bipolar-CMOS-DMOS technology has been vigorously developed.Low loss and high reliability have become the focus and difficulty in the design of lateral double-diffused metal-oxide-semiconductor field effect transistors in Bipolar-CMOS-DMOS technology.This paper introduces a lateral double-diffused metal-oxide-semiconductor field effect transis-tor based on the high temperature oxidation layer structure,and studies and analyzes the degradation mechanism of its hot carrier injection.The high temperature oxidation layer structure is used to improve the traditional shallow trench isolation structure,in which the oxide steps embedded in the semiconductor have adverse effects on the hot carrier injection of the de-vice.Thus improve the reliability of the device.The proposed structure shortens the current path length in the on state of the device and reduces the loss.In addition,this paper also proposes a self-aligned implantation process optimization meth-od for the P-type body region.By increasing the implantation process of the high-energy body region,the depletion region in the accumulation area is expanded,the surface electric field of the drift region is reduced,and the breakdown voltage is improved.The proposed HTO-LDMOS has a breakdown voltage of 43 V,a specific on-resistance of 9.5 mΩ·mm2,and a linear region current degradation of 0.87%after 10 000 s.
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