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金刚石二维电导和场效应管研究新进展

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金刚石表面沟道场效应管以氢终端金刚石表面的二维空穴气2DHG(Two-Dimensional Hole Gas)作为沟道实现输入电压对输出电流的控制,是目前金刚石电子器件的主流结构.该2DHG面电导具有可大范围调控的面电荷密度和较高空穴饱和漂移速度.本文回顾了金刚石场效应管器件在直流、频率和功率特性的研究进展,揭示了低迁移率是制约金刚石低功耗高速数字电路、高频器件和高功率微波器件发展的主要因素.从理论和实验总结了金刚石表面电导出现的类调制掺杂的新掺杂机理,尤其实现了室温下2DHG霍尔迁移率提升到680 cm2/Vs,材料方阻从10 kΩ/sq数量级降低到1.4 kΩ/sq电导性能的突破.相信这将会引起金刚石场效应管性能极大提升和器件的快速发展.
Research Progress of Two-Dimensional Electrical Conductivity and Field Effect Transistors of Diamond
Diamond surface-channel field-effect transistor utilizes two-dimensional hole gas (2DHG) on the hydro-gen-terminated diamond surface as the channel to realize the control on output current by input voltage,and it is the main-stream structure of diamond electronic devices. The 2DHG conductivity has a large range of controllable sheet density and a high saturation drift velocity. This paper reviewed the research progress of diamond field-effect transistors in DC,frequen-cy,and power characteristics,and revealed that low mobility is the main limiting factor for the development of diamond-based low-power high-speed digital circuits,high-frequency devices,and high-power microwave devices. It summarized the theoretical and experimental research of a new doping mechanism similar to modulation doping that emerged for the dia-mond surface conductivity recently. At room temperature the 2DHG Hall mobility has increased to 680 cm2/Vs,and the rele-vant square resistance has decreased from about 10 kΩ/sq to 1.4 kΩ/sq,which is expected to cause a great improvement in the performance of diamond field-effect transistors.

Diamondhydrogen-terminatedfield-effect transistortwo-dimensional hole gas

张金风、张进成、任泽阳、苏凯、郝跃

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西安电子科技大学,宽禁带半导体器件与集成技术全国重点实验室,微电子学院,陕西西安 710071

西安电子科技大学芜湖研究院,安徽芜湖 241002

金刚石 氢终端 场效应管 二维空穴气

国家重点研发计划自然科学基金自然科学基金

2022YFB36086006212781262374122

2024

电子学报
中国电子学会

电子学报

CSTPCD北大核心
影响因子:1.237
ISSN:0372-2112
年,卷(期):2024.52(6)