Design of a Millimeter-Wave Dual-Band Low Phase Noise VCO in 45 nm CMOS SOI Process
This paper presents the design of a millimeter-wave dual-band low phase noise voltage-controlled-oscilla-tor in 45 nm CMOS SOI (Complementary Metal Oxide Semiconductor Silicon On Insulator) process,which covers bands of 24.25～27.5 GHz and 37～43.5 GHz for 5G millimeter-wave communications. Based on the transistor's high performance as the RF switch in SOI process,the switched cap-bank and switched inductor topology are proposed in this paper,to enhance the quality factor Q for the wide-band tuning inductance and capacitance,increase the VCO (Voltage Controlled Oscillator) operating bandwidth,and lower the phase noise performance. Meanwhile,the switched capacitor is also adopted in the out-put matching network for good matching and stable output power in dual-bands. Measured results show that the designed VCO covers the bands of 24.25～27.5 GHz and 37～43.5 GHz for 5G millimeter-wave communication standards as in WRC-19,with output power of-4.8～0 dBm in low band and-6.4～-2.3 dBm in high band. The measured phase noise is-105.1 dBc/Hz@1 MHz offset for the 24.482 GHz carrier,and-95.3 dBc/Hz@1 MHz offset for the 43.308 GHz carrier. The DC power consumption for the core circuit is 15.3～18.5 mW,and the core area is 0.198 mm2. The corresponding FoM (Figure of Merit) and FoMT for low (high) band is-181.3 dBc/Hz (-175.4 dBc/Hz),and-194.3 dBc/Hz (-188.3 dBc/Hz),respectively.
complementary metal oxide semiconductor Silicon on insulatorvoltage controlled oscillator5G milli-meter wavedual-band
万方数据
维普
