本文提出了一种基于复合左右手(Composite Right-/Left-Handed,CRLH)理论的双模态毫米波片上传输线(Transmission Line,TL),有效兼顾了宽频段和低损耗特性,并且同时包含支持前向波的右手频段和支持后向波的左手频段.为解决毫米波半导体衬底高损耗、高寄生干扰的问题,本文首先提出T型片上CRLH单元,通过研究CRLH传输线的电路拓扑与结构实现,减小了传输损耗并展宽带宽.此外,文章通过研究色散特性实现左手和右手通带两种模态.基于砷化镓(GaAs)基集成无源器件(Integrated Passive Device,IPD)工艺,加工并实测了一款工作频段覆盖18～44.5 GHz的3阶周期CRLH TL.本文提出的传输线尺寸紧凑,为1.3 mm × 0.55 mm,带有GSG(Ground Signal Ground)焊盘,最小插入损耗为1.18dB,3dB相对带宽超过90％.该测试结果表明所提出的片上传输线可广泛应用于实现独特电磁相位特性的片上功能电路和系统.
Millimeter-Wave On-Chip Dual-Mode Transmission Line with Low Insertion Loss and Wide Band Based on Composite Right-/Left-Handed Theory
This article proposes a dual-mode millimeter-wave on-chip transmission line(TL)based on the composite right-/left-handed(CRLH)theory,featuring both wide bandwidth and low loss.In addition,both the right-handed(RH)band supporting the forward waves and the left-handed(LH)band supporting backward waves are realized.To address the issues of high loss and high parasitic effect in millimeter-wave range and on semi-conductor substrate,a T-type CRLH on-chip unit cell is proposed.To further reduce the transmission loss and extend the bandwidth,the circuit topology and struc-tural realization are investigated.In addition,dual modes including the RH and LH bands are realized by analyzing the dis-persion curve of the CRLH transmission line.Based on Gallium Arsenide(GaAs)-based integrated passive device(IPD)technology,a 3rd-order periodic CRLH TL ranging from 18～44.5 GHz was fabricated and measured.The proposed trans-mission line features a compact size of 1.3 mm × 0.55 mm including GSG(Ground Signal Ground)pads,a minimum inser-tion loss of 1.18 dB,and a 3 dB fractional bandwidth exceeding 90％.These measurement results demonstrate that the pro-posed on-chip transmission line can be widely applied in on-chip functional circuits and systems for unique electromagnetic phase characteristics.
万方数据
维普
