Package Test and Output Characteristics of GaN-Based Hetero Junction Structure Hall Sensors
As the most commonly used sensor type in the field of magnetic sensing,Hall sensors have been widely used in industrial production,automotive electronics,aerospace,biomedicine and many other fields.In this work,the Al-GaN/GaN heterojunction Hall sensor was developed by using the standard semiconductor chip manufacturing process,tak-ing advantage of the high temperature tolerance and high mobility of wide-bandgap GaN semiconductor.The sensor in high temperature application environment requires the packaging material to resist high temperature,produce low stress and have little impact on the key indicators of the device.In this work,the influence mechanism of three different packaging materials on the performance of the sensor and the bonding wire is simulated,the changes of sensor sensitivity,offset volt-age,temperature drift coefficient and other physical parameters before and after packaging with different packaging materi-als are verified by experiments.Finally,the packaging material with the best comprehensive performance and can be used in 550 K high temperature environment is selected.The offset voltage of the final packaged Hall sensor is less than 115 μV when the excitation current is kept at 1.0 mA,and the signal linearity is better than 0.3％in the range of 0～3.0 mA input cur-rent and 0～1.0 T magnetic field.The temperature drift coefficient is only-120.9 ppm/K in the temperature range of 300～550 K,which is better than the results reported in the literatures.The fabricated Hall sensor is expected to be applied in the magnetic field detection in extreme environments.
AlGaN/GaN heterojunctionHall sensorpackagehigh temperature stabilitywire bonding
万方数据
维普
