Key Issue and Research Challenges of Wide Bandgap Semiconductor Detectors for Fusion Neutron Detection
In recent years,significant progress has been made in international fusion reaction research.The neutron detection technology which can meet requirements of nuclear energy systems such as controlled fusion reactors featuring high-energy and high-dose radiation has always been one of the core technologies in fusion research and application.Choos-ing wide bandgap semiconductor materials with strong radiation hardness to develop radiation detectors is an inevitable re-quirement for the development of radiation detectors in fusion installation.Diamond has excellent radiation hardness and ul-tra-fast time response,and is considered an ideal semiconductor material for fusion detection,especially for high-energy neutron diagnosis.Silicon carbide is also qualified to directly measure fusion neutrons,and its large-size epitaxial growth technology is quite mature.Large-area and highly sensitive neutron detectors prepared using silicon carbide can cover large-scale applications in fusion research installation.By studying these two types of wide bandgap semiconductor radiation de-tectors and achieving completely self-dependent preparation of high-performance devices,we can significantly improve the performance of China's nuclear fusion reaction measurement systems,and support China standing at the leading edge in the future global energy revolution.Therefore,this article will elaborate on the key issues and research challenges in the devel-opment of these two wide bandgap semiconductor detectors in the application scenarios of fusion neutron detection,to assist in the development and application of fusion energy in China.
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