首页|一种基于Si/SiC级联H桥逆变器的高性能模型预测控制方法

一种基于Si/SiC级联H桥逆变器的高性能模型预测控制方法

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Si/SiC级联H桥逆变器,能够利用不同器件的开关组合保证低输出电流谐波畸变率(Total Harmonic Distortion,THD)和装置效率,但也带来了Si/SiC子模块开关分配的难题.对此,本论文设计一种变权重的模型预测控制方法(Model Predictive Control,MPC)选择总开关状态并分配子模块开关组合.该方法在选取逆变器总开关状态和Si/SiC子模块开关组合的代价函数中引入基于器件开关损耗的变权重,以改善逆变器的效率和输出电流谐波畸变率.在五电平Si/SiC级联H桥逆变装置上验证了变权重MPC的有效性,相比于固定权重MPC,输出电流THD最多降低2.05%,装置损耗最多降低4.53%.
A High-Performance Model Predictive Control Strategy Based on Si/SiC Cascaded H-Bridge Inverter
Si/SiC cascaded H-bridge inverters enable a combination of different devices to ensure low output current total harmonic distortion(THD)and high device efficiency.However,this also presents the challenge of switching and as-signing Si/SiC cells.In this paper,a model predictive control(MPC)with variable weight is designed to select the total switch state and assign the cell switch combination.In this method,a variable weight based on the switching loss of the de-vice is introduced into the cost function of selecting the total switching state of the inverter and the switching combination of Si/SiC cells,to improve the efficiency and output current harmonic distortion rate of the inverter.The effectiveness of variable-weight MPC is verified on the five-level Si/SiC cascaded H-bridge inverter device,and the output current THD is reduced by up to 2.05%and the device loss is reduced by up to 4.53%compared with the fixed-weight MPC.

silicon carbide MOSFETsilicon IGBTcascaded H-bridge inverterswitching lossmodel predictive control

郭子跃、全惠敏、彭子舜、戴瑜兴

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湖南大学电气与信息工程学院,湖南 长沙 410082

温州大学电气与电子工程学院,浙江 温州 325035

碳化硅MOSFET 硅IGBT 级联H桥逆变器 开关损耗 模型预测控制

浙江省博士后科研项目择优资助项目

ZX316000203

2024

电子学报
中国电子学会

电子学报

CSTPCD北大核心
影响因子:1.237
ISSN:0372-2112
年,卷(期):2024.52(9)