Ultralow Energy Phase-Change Integrated Photonics Devices with the Silicon Dioxide/Magnesium Fluoride Platform
Phase-change integrated photonic devices are widely considered as a strong competitor to conventional electronic devices due to their large bandwidth,short delay,multiplexing and great anti-interference.However,current phase-change integrated photonic devices require high energy consumption,thus severely exacerbating its commercial appli-cation prospect.To address this issue,this paper innovatively proposed a promising silicon dioxide(SiO2)/magnesium fluo-ride(MgF2)based photonic architecture to replace the mainstream silicon based devices.Such device made use of the Ge2Sb2Te5(GST)and indium tin oxide(ITO)as the functional and microheater materials,respectively,which have received widespread applications today,and simulated its programming and readout process according to an independently devel-oped model that coupled electro-thermal and phase-change field processes.Results indicated that the energy consumption for crystallization and amorphization were 78 aj/nm3 and 90 aj/nm3,much lower than majority of other silicon-based devic-es.It also exhibited good light propagation trait at near-infrared band(1 550 nm),as well as multilevel characteristic with more than 5 intermediate states and short pulse width with 50 ns.Additionally,further research suggested that the photonic neural networks constructed from the proposed device can be used to recognize the iris dataset,and its accuracy can reach 90%,close to that of conventional neural networks(～94.7%).Aforementioned work provided for the new strategy for devel-oping emerging phase-change photonic devices with low power,in-memory computing and neuromorphic computing func-tionalities,and exhibited its extremely important significance to the general non von-Neumann regime that has both elec-tronic and photonic performance superiorities.
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