A Review of Terahertz Sources Based on Planar Schottky Diodes

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外文摘要：The special position of terahertz wave in the electromagnetic spectrum makes it possess the charac-teristics of orientation,broadband,penetration and low energy,which promotes the extensive research of tera-hertz wave in the fields of communication,radar,imaging,sensing,security inspection and so on.The solid-state terahertz sources based on semiconductor devices have at-tracted extensive attention in the field of terahertz in-formation technology due to their characteristics such as being able to work at room temperature,being small in size,being easy to integrate and having good frequency stability.Terahertz planar Schottky diode is a kind of low parasitic semiconductor device.Its high cutoff frequency makes it work well in the terahertz range.The frequency multiplier based on planar Schottky diode is an import-ant part of terahertz solid state source.In this review,the development of Schottky diodes technology in recent years have been introduced,including the structures and preparation of Schottky diodes.In addition,the current situation and performance of different types of terahertz sources based on Schottky diodes are further introduced,and the future development trend is discussed.

外文关键词：

Terahertz sourcePlanar Schottky di-odesFrequency multiplierTerahertz diodes

作者：

KOU Wei、LIANG Shixiong、ZHOU Hongji、DONG Yazhou、GONG Sen、YANG Ziqiang、ZENG Hongxin

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作者单位：

University of Electronic Science and Technology of China,Chengdu 611731,China

Yangtze Delta Region Institute(Huzhou),Huzhou 313001,China

National Key Laboratory of Application Specific Integrated Circuit,Hebei Semiconductor Research Institute,Shijiazhuang 050051,China

基金：

National Key Research and Development Program of China国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金Sichuan Science and Technology Program

项目编号：

2018YFB180150361931006U20A20212619010936187141961771327619210022020JDRC0028

出版年：

2022

DOI：

10.1049/cje.2021.00.302

电子学报(英文)

CSTPCDSCIEI

ISSN：1022-4653

年,卷(期)：2022.31(3)

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