High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes

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外文摘要：The research on high power 170 GHz frequency doubler based on the GaAs Schottky diodes is proposed in this paper.This basic doubler cell is de-veloped with a 50-μm-thick,600-μm-wide,and 2-mm-long AIN substrate with high thermal conductivity to reduce the thermal effect.Besides,power combined frequency doubler has been fabricated to improve the power capa-city by a factor of two.Great agreement has been achieved between the simulated results based on electro-thermal model and measured performances.At room tem-perature,the 3 dB bandwidth of the single doubler based on GaAs Schottky diodes is 11.8％over the frequency range from 160 to 180 GHz with pumping power of 150 to 330 mW.And the peak efficiency of the doubler is meas-ured to be 33.1％,while the maximum output power is 101.7 mW at 174.08 GHz.As for power combined circuit,the best efficiency is 30.1％with a related output power of 204.6 mW.The proposed methods of developing high power multipliers can be applied in higher frequency band in the future.

外文关键词：

Schottky diodeFrequency doublerPower-combinedThermal dissipation

作者：

TIAN Yaoling、HE Yue、HUANG Kun、JIANG Jun、LIN Changxing、ZHANG Jian

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作者单位：

Microsystem and Terahertz Research Center,China Academy of Engineering Physics,Chengdu 610200,China

Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China

School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China

基金：

National Key Research and Development Program of ChinaPresident Funding of China Academy of Engineering Physics

项目编号：

2018YFB1801504YZJJLX2018009

出版年：

2022

DOI：

10.1049/cje.2021.00.248

电子学报(英文)

CSTPCDSCIEI

ISSN：1022-4653

年,卷(期)：2022.31(3)

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