首页|A Design and Comparative Investigation of Graded AlxGa1-xN EBL for W-B0.375GaN/W-B0.45GaN Edge Emitting Laser Diode on AlN Substrate
A Design and Comparative Investigation of Graded AlxGa1-xN EBL for W-B0.375GaN/W-B0.45GaN Edge Emitting Laser Diode on AlN Substrate
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In this paper,we numerically demon-strated the possibility of using wurtzite boron gallium ni-tride(W-BGaN)as active layers(quantum well and quantum barriers)along with aluminum gallium nitride(AlGaN)to achieve lasing at a deep ultraviolet range at 263 nm for edge emitting laser diode.The laser diode struc-ture simulations were conducted by using the Crosslight-LASTIP software with a self-consistency model for varies quantity calculations.Moreover,multiple designed struc-tures such as full and half have been achieved as well as the study of the effect of grading engineering/techniques at the electron blocking layer for linearly-graded-down and linearly-graded-up grading techniques were also em-phasized.As a result,a maximum emitted power of 26 W,a minimum threshold current of 308 mA,a slope effi-ciency of 2.82 W/A,and a minimum p-type resistivity of 0.228 Ω cm from the different doping concentrations and geometrical distances were thoroughly observed and jot-ted down.
National Center for International Joint Research of Electronic Materials and Systems,International Joint-Laboratory of Electronic Materials and Systems of Henan Province,School of Information Engineering,Zhengzhou University,Zhengzhou 450001,China
Zhengzhou Way Do Electronics Co.Ltd.,Zhengzhou 450001,China
Research Institute of Industrial Technology Co.Ltd.,Zhengzhou University,Zhengzhou 450001,China
Institute of Materials and Systems for Sustainability,Nagoya University,Nagoya,Aichi-ken 464-8601,Japan
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国家重点研发计划Key project of science and technology of Henan Province国家自然科学基金National Natural Science Foundation of China Henan Provincial Joint Fund Key Project
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