首页|A CMOS 4-Element Ku-Band Phased-Array Transceiver

A CMOS 4-Element Ku-Band Phased-Array Transceiver

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This paper presents a Ku-Band fully dif-ferential 4-element phased-array transceiver using a standard 180-nm CMOS process.Each transceiver is in-tegrated with a 5-bit phase shifter and 4-bit attenuator for high-resolution radiation manipulation.The front-end system adopts time-division mode,and hence two low-loss T/R switches are included in each channel.At room tem-perature,the measured root-mean-square(RMS)phase error is less than 5.5°.Furthermore,the temperature in-fluence on passive switched phase shifters is analyzed.Meanwhile,an extra phase-shifting cell is developed to calibrate phase error varying with the operating temper-atures.With the calibration,the RMS phase error is re-duced by 7° at-45℃,and 5.4° at 85℃.The RMS amp-litude error is less than 0.92 dB at 15-18 GHz.In the RX mode,the tested gain is 9.6±1.1 dB at 16.5 GHz with a noise figure of 10.9 dB,and the input P1dB is-15 dBm,while the single-channel's gain and output P1dB in the TX mode are 11.3±0.4 dB and 9.4 dBm at 16.1 GHz,respect-ively.The whole chip occupies an area of 5x4.2 mm2 and the measured isolation between each two adjacent chan-nels is lower than-23.1 dB.

AttenuatorCMOSKu-bandPhased-arrayPhase shifterTransceiverTemperature effect

ZHANG Xiaoning、YU Yiming、ZHAO Chenxi、LIU Huihua、WU Yunqiu、KANG Kai

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School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China

National Key R&D Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of China

2020YFB1805003619310076217110262025106

2022

10.1049/cje.2021.00.372

电子学报(英文)

电子学报(英文)

CSTPCDSCIEI
ISSN：1022-4653
年,卷(期)：2022.31(6)
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