首页|Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled P-Type Dummy Region

Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled P-Type Dummy Region

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A novel trench insulated gate bipolar transistor(TIGBT)with a shallow emitter trench controlled P-type dummy region(STCP-TIGBT)is proposed.Compared with the conventional TIGBT with floating P-type dummy region(CFP-TIGBT)and TIGBT with floating P-type dummy region and normally on hole path(HFP-TIGBT),the proposed STCP structure not only speeds up the extraction of excessive holes in the turn-off process but also reduces the Miller plateau charge(Qgc).Therefore,both the power loss and electromagnetic interference(EMI)noise are significantly reduced.Simulation results show that the Qgc of the proposed device is only 501 nC/cm2,which is reduced by 58.5％and 26.4％when compared to the CFP-TIGBT and HFP-TIGBT,respectively.At same on-state voltage drop(Vceon)of 1.02 V,the turn-off loss(Eoff)of the proposed device is 13.49 mJ/cm2,which is 64.6％and 67.6％less than those of the CFP-TIGBT and HFP-TIGBT,respectively.Moreover,the reverse recovery dVak/dt of the freewheeling diode at same turn-on loss(Eon)of 31.8 mJ/cm2 for the proposed STCP-TIGBT is only 2.15 kV/μs,which is reduced by 91.3％and 57.2％when compared to 24.69 kV/μs and 5.02 kV/μs for the CFP-TIGBT and HFP-TIGBT,respectively.The reduced dV/dt significantly suppresses the electromagnetic interference noise generated by the proposed device.

Trench insulated gate bipolar transistorOn-state voltage dropTurn-off lossTurn-on lossElec-tromagnetic interference noiseShallow emitter trenchP-type dummy region

Jinping ZHANG、Xiaofeng LI、Rongrong ZHU、Kang WANG、Bo ZHANG

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State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China(UESTC),Chengdu 610054,China

Institute of Electronic and Information Engineering of UESTC in Guangdong,Dongguan 523808,China

National Key Research and Development Program of ChinaKey Realm R&D Program of Guangdong Province,ChinaGuangdong Basic and Applied Basic Research Foundation of China

2018YFB12018022018B0101420012020A1515010128

2024

10.23919/cje.2022.00.080

电子学报(英文)

电子学报(英文)

CSTPCDEI
ISSN：1022-4653
年,卷(期)：2024.33(2)
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