首页|Design of High Performance MXene/Oxide Structure Memristors for Image Recognition Applications

Design of High Performance MXene/Oxide Structure Memristors for Image Recognition Applications

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Recent popularity to realize image recognition by memristor-based neural network hardware systems has been witnessed owing to their similarities to neurons and synapses.However,the stochastic formation of conductive filaments inside the oxide memristor devices inevitably makes them face some drawbacks,represented by relatively higher power consumption and severer resistance switching variability.In thiswork,we design and fabricate the Ag/MXene(Ti3C2)/SiO2/Pt memristor after considering the stronger interactions between Ti3C2 and Ag ions,which lead to a Ti3C2/SiO2 structure memristor owning to much lower"SET"voltage and smaller resistance switching fluctuation than pure SiO2 memristor.Furthermore,the conductances of the Ag/Ti3C2/SiO2/Pt memristor have been modulated by changing the number of the applied programming pulse,and two typical biological behaviors,i.e.,long-term potentiation and long-term depression,have been achieved.Finally,device conductances are introduced into an integrated device-to-algorithm framework as synaptic weights,by which the MNIST hand-written digits are recog-nized with accuracy up to 77.39％.

MemristorMXene/Oxide structureElectrical characteristicsFirst-principles calculationsImage recognition

Xiaojuan LIAN、Yuelin SHI、Xinyi SHEN、Xiang WAN、Zhikuang CAI、Lei WANG

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The College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China

The National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology,Nanjing University of Posts and Telecommunications,Nanjing 210023,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaOpen Research Fund of the National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly TechnologyNatural Science Foundation of Jiangsu ProvinceNatural Science Foundation of Jiangsu ProvinceNatural Science Foundation of Jiangsu ProvinceNanjing University of Posts and TelecommunicationsFoundation of Jiangxi Science and Technology Department

619640126180407961904087KFJJ20200102BK20211273BZ202103119KJB510046NY22011220202ACBL21200

2024

10.23919/cje.2022.00.125

电子学报(英文)

电子学报(英文)

CSTPCDEI
ISSN：1022-4653
年,卷(期)：2024.33(2)
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