SiC Double Trench MOSFET with Split Gate and Integrated Schottky Barrier Diode for Ultra-low Power Loss and Improved Short-Circuit Capability

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外文摘要：A silicon carbide(SiC)double trench metal-oxide-semiconductor field effect transistor(DTMOS)with split gate(SG)and integrated Schottky barrier diode(SBD)is proposed for the first time.The proposed device features two enhanced deep trenches in the surface,in which a source-connected SG with a thicker dielectric layer is located at the bottom of the deep gate trench and an integrated SBD is located at the sidewall of the deep source trench(DST).Combined with shielding effect provided by the P+shield layer under the DST and integrated SBD,the pro-posed structure not only reduces the reverse transfer capacitance(Crss)and gate-drain charge(Qgd)but also restrains the saturation drain current(Id,sat)and improves the diode performance of the device.Numerical analysis results show that compared with the Con-DTMOS and Con-DTMOS with external SBD diode,the turn-on loss(Eon)and turn-off loss(Eoff)for the proposed device are reduced by 56.4％/70.4％and 56.6％/69.9％,respectively.Moreover,the Id,sat at the Vgs of 18 V for the proposed device is reduced by 74.4％and the short-circuit withstand time(tsc)is im-proved by about 7.5 times.As a result,an ultra-low power loss and improved short-circuit capability is obtained for the proposed device.

外文关键词：

Silicon carbideMetal-oxide-semiconductor field effect transistor(MOSFET)Specific on resis-tanceReverse transfer capacitanceHigh frequency figure of meritForward conduction voltage dropTurn-on lossTurn-off lossSaturated drain currentShort-circuit w

作者：

Jinping ZHANG、Qinglin WU、Zixun CHEN、Hua ZOU、Bo ZHANG

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作者单位：

State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

基金：

China Postdoctoral Science Foundation

项目编号：

2020M682607

出版年：

2024

DOI：

10.23919/cje.2022.00.394

电子学报(英文)

CSTPCDEI

ISSN：1022-4653

年,卷(期)：2024.33(5)