Investigating the Effects of V2C MXene on Improving the Switching Stability and Reducing the Operation Voltages of TiO2-Based Memristors

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外文摘要：Three-atoms-type V2C MXene,an emerging class of transition metal carbides,has attracted tremendous attention in the fabrication of advanced memristive devices due to its excellent electrochemical properties.However,the inserted effects and corresponding physical mechanisms of inserting V2C on traditional TiO2-based memristors have not been clearly explored.In this work,exhaustive electrical characterizations of the V2C/TiO2-based devices exhibit enhanced performance(e.g.,improved switching stability and lower operating voltages)compared to the TiO2-based counterparts.In addition,the advantaged influences of the inserted V2C have also been studied by means of first-principles calculations,confirming that V2C MXene enables controllable internal ionic process and facilitated formation mechanism of the Ag conductive filaments.This work demonstrates a way to combine experimental and theoretical investigations to reveal the positive effects of introducing V2C MXene on memristor,which is beneficial for fabricating performance-enhanced memristors.

外文关键词：

MemristorV2C MXeneFirst-principles calculationSwitching stabilityFormation mechanism

作者：

Nan HE、Lei WANG、Yi TONG

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作者单位：

College of Electronic and Optical Engineering,College of Flexible Electronics(Future Technology),and College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023 China

Gusu Laboratory of Materials,Suzhou 215000,China

基金：

2030 Major Project of the Chinese Ministry of Science and TechnologyHigh-End Foreign Experts Project of the Ministry of Science and TechnologyPostgraduate Research and Practice Innovation Program of Jiangsu ProvincePostgraduate Research and Practice Innovation Program of Jiangsu ProvinceJiangsu Province Research FoundationJiangsu Province Research Foundation

项目编号：

2021ZD0201200G2022178034LKYCX1909564600KYCX220928BK2019120216KJA510003

出版年：

2024

DOI：

10.23919/cje.2022.00.327

电子学报(英文)

CSTPCDEI

ISSN：1022-4653

年,卷(期)：2024.33(5)