首页|High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-reflection Design

High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-reflection Design

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The study focuses on the development of gallium nitride(GaN)Schottky barrier diode(SBD)fre-quency doublers for terahertz technology.The low conversion efficiency of these doublers limits their practical appli-cations.To address this challenge,the paper proposes a multi-objective local no-reflection design method based on a three-dimensional electromagnetic structure.The method aims to improve the coupling efficiency of input power and reduce the reflection of power output.Experimental results indicate that the proposed method significantly improves the performance of GaN SBD frequency doublers,achieving an efficiency of 16.9%and a peak output power of 160 mW at 175 GHz.These results suggest that the method can contribute to the further development of GaN SBD fre-quency doublers for terahertz technology.

Gallium nitrideFrequency doublerMulti-objective optimizationLocal non-reflection design

Yazhou DONG、Tianchi ZHOU、Shixiong LIANG、Guodong GU、Hongji ZHOU、Jianghua YU、Hailong GUO、Yaxin ZHANG

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School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China

National Key Laboratory of Solid-State Microwave Devices and Circuits,Hebei Semiconductor Research Institute,Shijiazhuang 050051,China

National Key Research and Development Program of ChinaNational Key Research and Development Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaSichuan Science and Technology ProgramFundamental Research Funds for the Central UniversitiesChina Postdoctoral Science Foundation

2021YFA14010002018YFB18015036193100662131007U20A20212619010936187141962101111619210022020JDRc0028ZYGX2020ZB0112021M700706

2024

电子学报(英文)

电子学报(英文)

CSTPCDEI
ISSN:1022-4653
年,卷(期):2024.33(5)