Theoretical Research on a D-Band Traveling Wave Extended Interaction Amplifier

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外文摘要：A traveling-wave,extended interaction amplifier is herein investigated for use in millimeter-wave and terahertz amplification sources.By placing engineered extended interaction cavities between the traveling wave struc-tures,higher gain is obtained with a shorter high frequency circuit,compared with conventional traveling wave tubes architectures.The bandwidth of the device is significantly increased relative to extended interaction klystrons.A D-band beam wave interaction circuit of 26 mm long has been designed.Particle-in-cell simulations at 21.5-kV operating voltage,0.3-A beam current,and 5-mW input power show that the maximum output power reaches 351 W,with a gain of 48.4 dB and 3-dB bandwidth of 1.42 GHz.

外文关键词：

D-bandExtended interaction klystronTraveling wave tube

作者：

Zhongtao CUI、Xuesong YUAN、Xiaotao XU、Dongrui CHEN、Yifan ZU、Matthew Thomas Cole、Qingyun CHEN、Yang YAN

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作者单位：

Terahertz Science and Technology Key Laboratory of Sichuan Province,School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China

Department of Electronic and Electrical Engineering,University of Bath,Bath BA27AY,UK

出版年：

2024

DOI：

10.23919/cje.2022.00.345

电子学报(英文)

CSTPCDEI

ISSN：1022-4653

年,卷(期)：2024.33(6)