IAZO薄膜晶体管的制备与性能研究
Preparation and Performance Study of IAZO Thin Film Transistors
张祺 1初学峰 1胡小军 1黄林茂 1谢意含1
作者信息
- 1. 吉林建筑大学电气与计算机学院 长春 130118;吉林建筑大学寒地建筑综合节能教育部重点实验室 长春 130118
- 折叠
摘要
为了探究退火温度对IAZO薄膜晶体管器件光电性能的影响,采用射频溅射单溅射法,并在(400～700)℃的范围内制备了一系列真空退火后的IAZO薄膜晶体管.分别对IAZO薄膜表面形貌、内部结构、元素组成和价态组成进行分析,采用半导体参数仪及搭配的探针台测试电学性能测试.采用紫外可见分光光度计测试薄膜透过率.结果表明,随着退火温度的升高,器件的电学性能先呈现上升趋势,达到峰值后开始下降.在 500℃真空退火 1 h后,IAZO TFT饱和迁移率为 0.18 cm2/(V·s)、阈值电压为 3.35 V、亚阈值摆幅为 0.10 V/decade、开关比为 1.13*108.IAZO薄膜透光率达到 90%以上、光学带隙达到 4.1 eV,器件性能达到最佳.
Abstract
In order to investigate the effect of different annealing temperatures on the optoelectronic performance of IAZO thin film transistor devices,IAZO thin film transistors were prepared by radio frequency sputtering single sputtering method after vacuum annealing at(400～700)℃.The surface morphology,internal structure,elemental composition,and valence state composition of IAZO thin films were analyzed in decibels,and the electrical performance was tested using a semiconductor parameter meter and a matching probe platform.Use a UV visible spectrophotometer to test the transmittance of the thin film.The results indicate that the electrical performance of the device first increases and then decreases with the annealing temperature.After vacuum annealing at 500℃for 1 hour,the saturation mobility of IAZO TFT was 0.18 cm2/(V·s),the threshold voltage was 3.35 V,the sub threshold swing was 0.10 V/decade,and the switching ratio was 1.13*108.The transmittance of IAZO thin film reaches over 90%,and the optical bandgap reaches 4.1 eV,achieving the best device performance.
关键词
薄膜晶体管/退火处理/XPS分析/铟铝锌氧化物/光电性能Key words
thin film transistor/annealing treatment/XPS analysis/indium aluminum zinc oxide/optoelectronic performance引用本文复制引用
基金项目
吉林省科技发展计划(20220201068GX)
出版年
2024
NETL
NSTL
万方数据