Preparation and Performance Study of IAZO Thin Film Transistors
In order to investigate the effect of different annealing temperatures on the optoelectronic performance of IAZO thin film transistor devices,IAZO thin film transistors were prepared by radio frequency sputtering single sputtering method after vacuum annealing at(400～700)℃.The surface morphology,internal structure,elemental composition,and valence state composition of IAZO thin films were analyzed in decibels,and the electrical performance was tested using a semiconductor parameter meter and a matching probe platform.Use a UV visible spectrophotometer to test the transmittance of the thin film.The results indicate that the electrical performance of the device first increases and then decreases with the annealing temperature.After vacuum annealing at 500℃for 1 hour,the saturation mobility of IAZO TFT was 0.18 cm2/(V·s),the threshold voltage was 3.35 V,the sub threshold swing was 0.10 V/decade,and the switching ratio was 1.13*108.The transmittance of IAZO thin film reaches over 90%,and the optical bandgap reaches 4.1 eV,achieving the best device performance.
thin film transistorannealing treatmentXPS analysisindium aluminum zinc oxideoptoelectronic performance
NETL
NSTL
万方数据
