Experimental Study of Megasonic Assisted Laser Processing for Wafer Scribing
Facing the demand of wafer scribing,a megaacoustic assisted laser processing method was proposed to address the issues of easy generation of recast layers and low depth to width ratio of grooves.The theory of laser ablation and megaacoustic vibration was analyzed,and the response surface analysis method was used to optimize the processing parameters.The result showed that megasonic waves can knock out the liquid phase materials and molten debris generated by ablation from the ablation zone,thereby reducing the area of the recast layer and improving the surface morphology of the wafer.After adding megasound assistance,the area of the recast layer on the wafer surface decreased by 25%after groove etching,and the ablation depth to width ratio increased from 2.65 to 3.82.Based on the above research,a well shaped grid structure was obtained by etching on the surface of the wafer,proving that this method can effectively improve the surface morphology of wafer etching,reduce the generation of recast layers,and improve the efficiency and accuracy of wafer etching.
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