首页|以双向可控硅为辅助开关的直流固态断路器关断过压钳位技术

以双向可控硅为辅助开关的直流固态断路器关断过压钳位技术

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基于传统金属氧化物压敏电阻的无源过压钳位技术仅能将过压峰值限制在母线电压的两倍以上,极大降低了固态断路器中半导体开关的额定电压利用率,进而降低了固态断路器的运行效率、功率密度和成本优势.为此,在对传统过压钳位技术分析的基础上,提出了基于双向可控硅的有源过压钳位技术.利用双向可控硅更易驱动、能够双向导通/阻断和在毫安级电流下自关断的特性,简化了关断过压钳位电路功率结构并设计了专用不控RC驱动电路,降低了电路硬件成本和体积,实现了较好的过压钳位效果.对过压钳位电路的工作过程、参数设计及器件选型进行了详细分析与举例说明.最后,进行了母线电压600 V下的关断过压对比实验,结果表明该方案在保证较好的过压钳位效果的同时其成本被进一步降低.
Bidirectional thyristor-based active clamping technology for turn-off overvoltage of DC solid-state circuit breakers
Traditional metal oxide varistor-based passive overvoltage clamp techniques only limit the peak overvoltage to more than twice the DC bus voltage.As a result,the rated voltage utilization of semicon-ductor switches in solid-state circuit breakers is reduced,which reduces the efficiency,power density and cost advantages of solid-state circuit breakers.To address this issue,based on the analysis of traditional overvoltage clamping techniques,an active overvoltage clamp technique based on the bidirectional thyris-tor was proposed.Based on the feature that bidirectional thyristors are easier to drive,can be turned on/off in both directions,and can self-turn off under milliamp current,the structure of the overvoltage clamp circuit was simplified,and a dedicated uncontrolled RC drive circuit was designed.Therefore,the over-voltage suppression effect,hardware cost and volume were optimized.The working process,parameters design and devices selection of the overvoltage clamp circuit were analyzed in detail and illustrated with examples.Finally,a comparative experiment on turn-off overvoltage at a bus voltage of 600 V was con-ducted.The results show that the proposed scheme ensures better overvoltage suppression while its cost is reduced.

solid-state circuit breakerovervoltage clampmetal oxide varistorbidirectional thyristordrive circuit

薛聚、赖耀康、陈建良、辛振

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河北工业大学 省部共建电工装备可靠性与智能化国家重点实验室,天津300401

中国北方车辆研究所,北京100072

北京市科通电子继电器总厂有限公司,北京100054

固态断路器 过压钳位 金属氧化物压敏电阻 双向可控硅 驱动电路

河北省自然科学基金

E2021202164

2024

电机与控制学报
哈尔滨理工大学

电机与控制学报

CSTPCD北大核心
影响因子:1.014
ISSN:1007-449X
年,卷(期):2024.28(8)