Research on Equipotential of High Voltage SVG Cascaded H-bridge Module
The high voltage cascade SVG device is composed of several H-bridge modules and is in suspension due to its high voltage level and insulation requirements as well as ungrouneded H-bridge module. IGBT can,in case of operation,generate a large amount of heat,the substrate of the switching device therefore needs to be close to the surface of the radiator for better heat dissipation,but at the same time,it also forms a large distributed capacitance. The radiator which is affected by IGBT switching voltage and distributed capacitance will induce voltage and the suspension radiator is equivalent to electromagnetic radiation source,which can create serious electromagnetic interference. In this paper,the harm of radiator suspension is analyzed by setting up a near-field coupling model of H-bridge module,and a simulation model is set up for verification. Finally,a test platform is built to study the influence of radiator suspension and equipotential connection on module electromagnetic interference. Through multi-dimensional comparison,it is finally concluded that the equipotential connection at the DC midpoint of radiator was the best way.
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