The parameters of AlGaN/GaN high electron mobility transistor(HEMT),such as effective gate length,effective gate width and channel resistance,are crucial for process control and device design.Based on the linear relationship of the total resistance between the source and drain of AlGaN/GaN HEMT devices with gate length and the reciprocal of gate width,a simple method is proposed to extract effective gate length and effective gate width.Two sets of AlGaN/GaN HEMT devices with source/drain spacing of 80 µm and gate/source spacing of 10 μm are fabricated.One set of devices has a fixed gate width of 400 μm and gate lengths of 10,20,30,40,50 and 60 μm,respectively;the other set of devices has a fixed gate length of 40 μm and gate widths of 200,300,400,500,600 and 800 μm,respectively.By studying the variation law of total resistance between the source and drain with gate length and gate width,it is found that the difference between the gate length and the effective gate length is 0.489 89 μm,and the difference between the gate width and the effective gate width is-11.121 91 μm.
关键词
AlGaN/GaN高电子迁移率晶体管/器件参数/有效栅长/有效栅宽
Key words
AlGaN/GaN high electron mobility transistors/device parameters/effective gate length/effective gate width
维普
万方数据