Barium titanate(BTO)thin films were prepared by magnetron sputtering on low-resistance Si(100)substrates.Ag electrodes were prepared by magnetron sputtering,and Si(100)/BTO/Ag resistive random-acess memory was successfully constructed.The structure and morphology of BTO films at different annealing temperatures and holding times were characterized by XRD,SEM and AFM.The resistive switching properties of Si(100)/BTO/Ag resistive random-acess memory were tested by digital source table.The results showed that the BTO film prepared by annealing at 750 ℃ for 0.5 h has the highest crystallinity,and the crystal particles on the surface of the film are evenly distributed.The constructed Si(100)/BTO/Ag resistive random-acess memory has the best resistive switching performance,showing a typical bipolar switching effect.
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