Design of Dual-Pulse Test Parameters and Efficiency Evaluation of a Four-Switch Buck-Boost DC-DC Converter
Dual-pulse testing is a primary method for evaluating the performance of power semiconductor de-vices,and the accuracy of the test parameters directly impacts the test results.To accurately determine the switch-ing characteristics of power semiconductor devices,this study focuses on the third-generation wide bandgap semi-conductor SiC-MOSFET.It details the working principles of the dual-pulse test circuit and provides methods for selecting test parameters,such as pulse width,pulse interval,and related inductance and capacitance values.A hardware test platform for a four-switch Buck-Boost converter was constructed,and tests were performed using the specified dual-pulse parameters for both single and parallel SiC-MOSFET configurations.The switching loss data obtained were used to estimate the power loss in the Buck-Boost converter.The accuracy of the parameter design in dual-pulse testing was validated through efficiency tested at different output power levels.
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