0.18μm CMOS X波段接收机射频前端设计
Design of a 0.18μm CMOS RF Front-end for X-band Receiver
龙强 1庄奕琪 1阴玥 1李振荣1
作者信息
- 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,陕西西安710071
- 折叠
摘要
本文给出了一个采用TSMC 0.18 μm CMOS工艺应用于X波段SAR(合成孔径雷达)的单片接收机射频前端的设计.接收机前端由低噪声放大器和混频器组成,低噪声放大器工作在9 GHz～llGHz,混频器将10GHz的射频信号转换到2GHz中频,本振信号由片外提供.在X波段频率下,尽管CMOS 0.18μm工艺特征频率比较低,工作仍然实现了低噪声系数,提高了集成度.测试结果表明,本设计在300MHz的带宽上实现了20dB的转换增益,噪声系数达到2.7Db,输入ldB压缩点达到-19.2dBm,在1.8V的电源电压下前端消耗26.6mA电流,芯片面积为1.3×0.97mm2.
Abstract
A monolithic front-end of X-band (10GHz) receiver for SAR(Synthetic Aperture Radar) application implemented with TSMC 0.18μm CMOS technology is presented in this paper.The front-end is composed of LNA(Low Noise Amplifier)and Mixer.The LNA operates at 9 GHz～1 1GHz and the Mixer converters the 10GHz RF(Radio Frequency) signal to 2GHz IF(Intermediate Frequency).The LO(Local Oscillator) signal are provided from the outside of the chip.This work achieves low noise figure and improve the level of integration under the process of CMOS 0.18μm technology,although the fT of this technology is much lower compared to other technologies:such as GaAs and InP,which are not suitable for largely integration.The measurement results show that this work achieves the conversion gain of 20dB over the 300MHz bandwidth,NF(Noise Figure) of 2.7dB and input PldB of-19.2dBm.The front-end draw 26.6mA current from 1.8V power supply and occupies a die area of 1.3×0.97mm2.
关键词
X波段/低噪声放大器/混频器/合成孔径雷达/噪声系数/转换增益Key words
X-band/LNA/Mixer/SAR/NF/Conversion gain引用本文复制引用
出版年
2013
NETL
NSTL
维普
万方数据