首页|Effects of spot size on the operation mode of GaAs photoconductive semiconductor switch employing extrinsic photoconductivity

Effects of spot size on the operation mode of GaAs photoconductive semiconductor switch employing extrinsic photoconductivity

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To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAs PCSS based on a semi-insulating wafer with a thickness of 1 mm,triggered by a 1064-nm extrinsic laser beam with the rectangular spot,has been investigated experimentally.It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes,and then significantly boosts the PCSS toward different operation modes.On this basis,a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms.Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching,while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching,which have been proved by comparing the domain evolutions under different spot sizes.

GaAs PCSSoperation modespot sizeon-state performancestwo-channel modeldomain evolution

韦金红、李嵩、陈红、曾凡正、贾成林、付泽斌、葛行军、钱宝良

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College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,People's Republic of China

Huxiang Youth Talent Support ProgramFoundation of State Key Laboratory of Pulsed Power Laser TechnologyFoundation of State Key Laboratory of Pulsed Power Laser Technology

2020RC3030SKL2021ZR02SKL2021KF05

2024

10.1088/2058-6272/ad1194

等离子体科学和技术(英文版)
中国科学院合肥物质科学研究所 中国力学学会

等离子体科学和技术(英文版)

EI
影响因子：0.297
ISSN：1009-0630
年,卷(期)：2024.26(5)
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