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二维金属与CrCl3接触的界面性质

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为了调控金属与CrCl3界面处的势垒,提出二维金属MX2(M=V,Nb;X=S,Se,Te)作为电极与CrCl3形成范德华接触的方法.采用密度泛函理论研究CrCl3/MX2接触界面的电学性质.结果表明:CrCl3/VS2、CrCl3/VSe2和CrCl3/NbTe2形成n型肖特基接触,其n型肖特基势垒值分别为0.49、0.15和0.14 eV;CrCl3/NbS2和CrCl3/NbSe2形成p型肖特基接触,其p型肖特基势垒值分别为0.49和0.65 eV;CrCl3/VTe2形成欧姆接触.CrCl3/MX2界面处可忽略的金属诱导间隙态和较小的界面偶极表明,CrCl3/MX2中存在较弱的费米能级钉扎效应,从而使肖特基势垒高度可以在较大范围可调.因此,通过选择不同功函数的二维金属电极,在CrCl3/MX2接触结构中能够实现接触类型和肖特基势垒高度的调控.研究结果有助于理解不同二维金属电极对CrCl3/MX2接触的势垒调控.
Interface properties of two-dimensional metal in contact with CrCl3
To modulate the potential barrier at the interface between metal and CrCl3,a method for forming van der Waals contact with CrCl3 using two-dimensional metal MX2(M=V,Nb;X=S,Se,Te)as elec-trode was proposed.The electrical properties of CrCl3/MX2 contact interface were studied using density func-tional theory.The results show that CrCl3/VS2,CrCl3/VSe2 and CrCl3/NbTe2 form n-type Schottky con-tacts,the n-type Schottky barrier values are 0.49,0.15 and 0.14 eV,respectively.CrCl3/NbS2 and CrCl3/NbSe2 form p-type Schottky contacts,the p-type Schottky barrier values are 0.49 and 0.65 eV,re-spectively.CrCl3/VTe2 forms ohmic contacts.The negligible metal induced gap states and small interface dipoles at CrCl3/MX2 interface indicate a weak Fermi level pinning effect in CrCl3/MX2,which makes the Schottky barrier height adjustable in a large range.Therefore,by selecting two-dimensional metal electrodes with different work functions,the control of contact type and Schottky barrier height can be achieved in CrCl3/MX2 contacts.The results is helpful to understand the barrier regulation of CrC13/MX2 contact by dif-ferent two-dimensional metal electrodes.

two-dimensional materialsinterfaceSchottky barrierelectrical properties

施永飞、胡艳梅、胡小会

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中国船舶集团有限公司第八研究院,南京 211153

南京工业大学材料科学与工程学院,南京 211816

二维材料 界面 肖特基势垒 电学性质

国家自然科学基金资助项目

11604047

2024

东南大学学报(自然科学版)
东南大学

东南大学学报(自然科学版)

CSTPCD北大核心
影响因子:0.989
ISSN:1001-0505
年,卷(期):2024.54(4)
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