Research on LaMnO3 buffer layer of YBCO thin film deposited on MgO substrate using MOCVD
Direct preparation of YBa2Cu3O7-δusing MOCVD method on MgO substratecan lead to significant lattice mis-match between MgO and YBCO,which affects the growth of thin films and the preparation of superconducting devices,so the use of buffer layers is a reliable solution.Based on MOCVD technology,LaMnO3 buffer layer was grown on MgO substrate to solve the problem of mixed growth mode of YBCO thin films.By changing the deposition parameters such as oxygen flow rate and depo-sition temperature in the MOCVD system,various analysis and testing methods such as XRD,SEM,AFM were used to research the structural orientation and surface morphology of the LMO buffer layer.The experimental results show that when the deposition temperature is 800 ℃ and the oxygen flow rate is 1 000 sccm,the structural orientation of the LMO buffer layer prepared is the best and the Φ scan of YBCO thin films grown on the buffer layer shows four independent peaks spaced 90° apart,indicating that YBCO has only one growth direction on the LMO buffer layer.Therefore,the LMO buffer layer can solve the problem of mixed growth modes of YBCO on MgO substrates and improve the quality and performance of YBCO thin films.
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