Design of low temperature and low noise amplifier based on GaAs HEMT
A new type of C-band low temperature and low noise amplifier was designed based on commercial-grade high electron mobility GaAs HEMT and simulated by ADS software.Based on the extremely low temperature test platform and the cryo-genic attenuator method,the noise of the cryogenic amplifier was tested with high precision.The results show that the amplifier can operate in the 4 K liquid helium temperature range,the equivalent noise temperature is as low as 7 K,the gain is greater than 30 dB,and the power consumption is better than 30 mW.It can be applied to quantum computing,radio astronomy,and other fields that have high requirements for noise,power consumption,and volume.
GaAs HEMTLow temperature and low noiseAmplifierC-BandQuantum computing
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