基于锗硅工艺0.01～2GHz低温低噪声放大器设计
Design of cryogenic LNA at 0.01 to 2 GHz based on silicon-germanium technology
潘北军 1张诚 1陆勤龙 1宾峰1
作者信息
- 1. 中国电子科技集团公司第十六研究所,合肥 230088;中国电子科技集团公司低温电子研发中心,合肥 230088
- 折叠
摘要
低频超宽带低噪声放大器是低温超导测试系统中核心器件之一.本文采用锗硅异质结双极型晶体管,单电源两级放大电路结构,通过电阻负反馈电路设计,实现了一款频率范围为0.01～2 GHz的低温低噪声放大器,该放大器增益大于33 dB,输入输出回波损耗小于-10 dB,15 K测试环境中,平均噪声温度10 K,功耗15 mW.该放大器目前已应用于超导信号测试系统中,解决了低温超导测试中极微弱信号放大难题,提高了测试系统灵敏度和测试效率.
Abstract
A low-frequency and ultra-wideband low-noise amplifier(LNA)is one of the core components in low-tem-perature superconducting testing systems.In this study,a cryogenic LNA at 0.01 to 2 GHz was designed through the design of a resistive negative feedback circuit and was fabricated using a SiGe heterojunction bipolar transistor and a two-stage amplifier cir-cuit with single power supply.The gain of LNA is over 33 dB,with input and output return losses being less than-10 dB.At 15 K,the average noise temperature is 10 K,the power consumption is 15 mW.The LNA was applied in low temperature super-conducting testing systems with improving the sensitivity and efficiency of the system.
关键词
低温/低噪声放大器/超导/锗硅工艺Key words
Low temperature/LNA/Superconductivity/SiGe process引用本文复制引用
基金项目
合肥国家实验室量子科技仪器专项项目(11160020230335KDD)
出版年
2024
NETL
NSTL
万方数据