The insulated-gate bipolar transistors(IGBTs)have been widely applied in the modern power electronics technology,and the paralleling of IGBTs has become an economical and feasible method in some working scenarios where one single device cannot meet the design requirements.The paralleling of IGBT modules can simplify the circuit structure,increase the converter output power,and improve the power density of devices.During the operation of IGBTs in parallel,the current imbalance,which may be caused by the difference in IGBTs'characteristics in a static or dynamic mode,the inconsistency of junction temperature,the asymmetry of a drive circuit or power loop,as well as the aging or failure of IGBTs due to long-term use,will affect the system's reliability and stability.The research hotspots of parallel-operating IGBTs at home and abroad are investigated.The principle and influence of static and dynamic current imbalance are summarized,and the difference in the current-sharing control principles is analyzed.The performance characteristics of current-sharing control are summarized and compared from the aspects of power loop current-sharing control and drive circuit current-sharing control.Furthermore,the development of current-sharing technologies for parallel-operating IGBTs in the future is also prospected.
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