The phenomenon of dynamic avalanche occurring during the IGBT turn-off process is one of the impor-tant reasons for its failure.To study the dynamic avalanche failure mechanism of IGBT,the Silvaco software was used to simulate and analyze this mechanism.Through the simulation and analysis of the breakdown mechanism,current density distribution and temperature distribution of dynamic avalanche,it is concluded that dynamic avalanche can generate moving current filaments and dead filaments which are either moving slowly or fixed.However,the failure of the device is caused by the dead filaments formed by dynamic avalanche.The dead filaments will lead to a sharp increase of local temperature in the IGBT,and the IGBT will eventually fail because the local temperature is too high to burn the device.On this basis,the causes of dead filaments are analyzed,and specific measures to prevent the dynamic avalanche failure of IGBT are also put forward.
关键词
IGBT/动态雪崩/失效机理/温度/电场
Key words
IGBT/dynamic avalanche/failure mechanism/temperature/electric field
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