The development of power modules towards high temperature,high power and high density raises higher requirements for the packaging structures of modules.Compared with the traditional wire-bond structure,the double-sid-ed structure has attracted more and more attention owing to its characteristics such as high heat dissipation capacity and low parasitic inductance.However,the mismatch of thermal expansion coefficient between materials used in the double-sided structure makes the structure suffer tremendous thermo-mechanical stress,thus reducing the reliability of power module.Therefore,to develop double-sided bi-directional modules with low thermo-mechanical stress,the effects of chip layouts on the heat dissipation performance of modules and the parasitic inductance were analyzed by simulations at first.Then,a flexible buffering spacer with low Young's modulus is proposed accordingly.The feasibility of reducing the thermo-mechanical stress and improving the reliability of the module was preliminarily proved by simulation and experi-mental results.
关键词
双面散热/双向开关SiC模块/热-机械应力/杨氏模量
Key words
Double-sided/bi-directional SiC module/thermo-mechanical stress/Young's modulus
维普
万方数据