To improve the performance of modern unipolar power diodes and further break through the"Silicon limit",by increasing the junction depth of P+region in traditional JBS diodes and introducing a super junction structure to reduce the chip thickness,the contradiction between on-state voltage drop and reverse blocking voltage of traditional unipolar devices is alleviated and the conduction current density of devices per unit area is improved.The effects of P-pillar concentration,N-pillar width and N-pillar concentration of super junction JBS diode on the forward conduction and reverse blocking characteristics are analyzed using a numerical method.The forward conduction and reverse blocking mechanism of super junction JBS diode are analyzed using the theory of electric field coupling effect,and a super junction JBS diode with 300 V is designed.
关键词
超级结/JBS二极管/正向导通特性/反向阻断特性/电场耦合效应
Key words
Super junction/JBS diode/forward conduction characteristic/reverse blocking characteristic/electric field coupling effect
维普
万方数据