Accurately obtaining the electromagnetic characteristics of high-voltage and high-power switching devices is crucial for predicting the electromagnetic interference in a system in which the devices are located. Research is focused on an equivalent method of switch waveforms for analyzing the electromagnetic characteristics of high-voltage and high-power switching devices. Aimed at the problem that the existing equivalent waveforms are too ideal to reflect the complex spectral components in the switching transients of devices, an analytical model for the electromagnetic characteristics of devices considering their switching processes is proposed. Starting from the time-domain analytical formula for the analytical model and based on the Fourier transform theory, the frequency-domain analytical formula for the analytical model is derived, and the spectral envelope characteristic parameters are analyzed to obtain the spectral characteristics of the analytical model. The theoretical analysis was verified by using the measured switching waveforms of Si IGBT and SiC MOSFET devices.
关键词
高压大功率/开关器件/电磁特性/解析模型
Key words
High-voltage and high-power/switching device/electromagnetic characteristic/analytical model
维普
万方数据