电源学报2024,Vol.22Issue(3) :72-77.DOI:10.13234/j.issn.2095-2805.2024.3.72

EconoDUAL封装、母线电压800V的1200 A IGBT功率模块设计与开发

Design and Development of 1200 A IGBT Power Module with EconoDUAL Packaging and 800 V Bus Voltage

回晓双 宁圃奇 范涛 郭新华 傅金源 黄珂
电源学报2024,Vol.22Issue(3) :72-77.DOI:10.13234/j.issn.2095-2805.2024.3.72

EconoDUAL封装、母线电压800V的1200 A IGBT功率模块设计与开发

Design and Development of 1200 A IGBT Power Module with EconoDUAL Packaging and 800 V Bus Voltage

回晓双 1宁圃奇 1范涛 1郭新华 2傅金源 3黄珂3
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作者信息

  • 1. 中国科学院大学,北京 100049;中国科学院电工研究所,北京 100190;电力电子与电气驱动重点实验室(中国科学院电工研究所),北京 100190
  • 2. 华侨大学,厦门 362021
  • 3. 浙江芯丰科技有限公司,台州 317700
  • 折叠

摘要

提高车规级功率模块的功率密度对电动汽车的性能具有重要意义,而传统功率模块内部采用的二维布局杂散电感大,限制了开关速度与母线电压,影响功率密度的提高.为此,以EconoDUAL封装的IGBT功率模块为对象,使用叠层DBC的方法进行三维布局设计,开发出了1200V/1200A的IGBT功率模块;详细介绍了所提功率模块的布局结构,与传统二维布局方法相比,杂散电感下降了58%;同时,对功率模块进行电气性能测试,通过了母线电压800V下脉冲电流为1200A的双脉冲实验,证明了模块功率密度的提高.为了在提高功率密度的情况下不影响散热性能,功率模块底部使用了水冷PinFin散热器,并对其进行了散热仿真和结-水热阻的测试,结果表明,IGBT热阻为0.084K/W,二极管热阻为0.124K/W,与同封装下商用1200V/900A模块相比并无明显差异,证明了所提设计方法的正确性及有效性.

Abstract

Enhancing the power density of vehicle-grade power modules is of significance for the performance of electric vehicles. The two-dimensional layout used in conventional power modules results in large parasitic inductance, which limits the switching speed and bus voltage and further affects the increase in power density. To solve this problem, an IGBT power module with EconoDUAL packaging was taken as the research object, and a three-dimensional layout was designed using the stacked DBC method to develop a 1200 V/1200 A IGBT power module. The layout structure of the proposed power module was introduced in detail. Compared with those obtained using the conventional two-dimensional layout methods, the parasitic inductance decreased by 58%. Additionally, electrical performance tests including a double-pulse test with pulse current of 1200 A under bus voltage of 800 V were conducted on the power module, thereby verifying the improved power density of the module. To maintain the heat dissipation performance while increasing the power density,a water-cooled PinFin heatsink was used at the bottom of the power module, and heat dissipation simulation and thermal resistance test were carried out, revealing an IGBT thermal resistance of 0.084 K/W and a diode thermal resistance of 0.124 K/W. These results show no significant difference compared with a commercially available 1200 V/900 A module with the same packaging, confirming the correctness and effectiveness of the proposed design approach.

关键词

功率模块/电动汽车/IGBT功率模块/杂散电感/热阻

Key words

Power module/electric vehicle/IGBT/parasitic inductance/thermal resistance

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出版年

2024
电源学报
中国电源学会,国家海洋技术中心

电源学报

CSCD北大核心
影响因子:0.7
ISSN:
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