Silicon carbide(SiC) devices possess advantages such as high voltage resistance, low losses and high thermal conductivity, making them of significant importance for the development of the electric vehicle industry. A design for a SiC MOSFET power module utilizing large-chip packaging was proposed, and experiments were conducted to analyze the module's electrical performance. Simulations were set up to compare the module temperature under two conditions, i.e., electrical characteristics only and a combination of electrical characteristics and temperature feedback. Simulation results indicate that under identical operating conditions, the SiC MOSFET power module designed with large-chip packaging exhibited stronger conduction current capability, smaller temperature variations and improved electrical performance.
关键词
电动汽车/功率密度/碳化硅芯片/功率模块/封装
Key words
Electric vehicle/power density/silicon carbide(SiC) chip/power module/packaging
维普
万方数据