电源学报2024,Vol.22Issue(3) :127-137.DOI:10.13234/j.issn.2095-2805.2024.3.127

基于导通压降的大容量IGBT模块结温观测与误差分析研究

Observation and Error Analysis of Junction Temperature of Large-capacity IGBT Module Based on On-state Voltage Drop

肖凯 王振 严喜林 李文骁 胡剑生 刘平
电源学报2024,Vol.22Issue(3) :127-137.DOI:10.13234/j.issn.2095-2805.2024.3.127

基于导通压降的大容量IGBT模块结温观测与误差分析研究

Observation and Error Analysis of Junction Temperature of Large-capacity IGBT Module Based on On-state Voltage Drop

肖凯 1王振 1严喜林 1李文骁 2胡剑生 3刘平2
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作者信息

  • 1. 中国南方电网有限责任公司超高压输电公司电力科研院,广州 510000
  • 2. 湖南大学电气与信息工程学院,长沙 410082
  • 3. 许继电气股份有限公司,许昌 461000
  • 折叠

摘要

压接式绝缘栅双极性晶体管PP-IGBT(press-pack insulated gate bipolar transistor)模块因其优越的电气性能和可靠性,广泛应用于柔性直流换流阀等大功率应用场景.IGBT芯片结温的准确观测对于其运行状态的监测与剩余寿命的评估都非常重要.已有结温观测方法多是针对键合引线式IGBT,未考虑到压接式模块的特性,无法直接应用.首先,针对大容量换流阀中的压接式IGBT,提出了一种实用的模块导通压降与结温标定方法,并对结温在线估计的误差进行了全面分析.然后,基于ABB公司5SNA 3000K452300压接式IGBT模块(4500V,3000A)设计了结温标定方案,包括实验电路、温度标定范围选择、结温控制方式、测量电路及标定实验步骤.最后,基于脉冲测试平台,对所提方法进行了验证.实验结果表明,所提结温标定与观测方案有效,结温观测误差在±5℃以内,且能适用压接式IGBT模块存在差异的情况.

Abstract

Press-pack insulated gate bipolar transistor(PP-IGBT) modules are widely used in high-power applications such as flexible DC converter valves owing to their superior electrical performance and reliability. Therefore, an accurate observation of the junction temperature of a IGBT chip is important for monitoring its operating status and evaluating its remaining lifetime. The existing junction temperature observation methods are mostly designed for bonded-lead IGBTs, which cannot be applied directly because the characteristics of PP modules are not taken into account. Aimed at the PP IGBTs in large-capacity converter valves, a practical method for calibrating the on-state voltage drop and junction tem-perature of modules is proposed, and the online estimation error of junction temperature is comprehensively analyzed. Then, a junction temperature calibration scheme is designed based on a 5SNA 3000K452300 PP IGBT module(4500 V, 3000 A) produced by ABB, including experimental circuits, temperature calibration range selection, junction tempera-ture control method, measurement circuits and calibration experimental procedure. Finally, based on a pulse test plat-form, the proposed method was verified. Experimental results show that the junction temperature calibration and obser-vation scheme proposed was effective, the junction temperature observation error was within ±5 ℃, and it can be applied to the case of differences in PP IGBT modules.

关键词

压接式IGBT/结温标定实验/热敏电参数/导通压降/误差分析

Key words

Press-pack insulated gate bipolar transistor (PP-IGBT)/junction temperature calibration experiment/thermo-sensitive electrical parameter/on-state voltage drop/error analysis

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出版年

2024
电源学报
中国电源学会,国家海洋技术中心

电源学报

CSCD北大核心
影响因子:0.7
ISSN:
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