As a novel and extensively applied switching device, silicon carbide metal-oxide-semiconductor field-ef fect transistor(SiC MOSFET) offers a faster switching speed and lower device loss in practical applications, thereby en-hancing the converter efficiency and delivering a superior performance. Aimed at the driving characteristics of SiC MOS-FET, the influence of parasitic parameters on its performance was analyzed. To investigate the relationship between the gate-source voltage and turn-on time of SiC MOSFET, a two-pulse experimental platform was also established. However, there are certain drawbacks with the existing domestic SiC MOSFET. Based on the experimental platform and other power products, the changes in conduction time, driving loss and negative voltage amplitude after replacing the imported SiC MOSFET with domestic devices were analyzed.
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