With the applications of an ultra-wideband pulse signal system in many important fields such as the in-telligent sensing technology for new energy automobile, the research and development of high-amplitude and fast-front pulse sources has been widely studied. To meet the demand of an ultrafast power semiconductor switch in nanosecond front pulses, the terminal failure mechanism of avalanche bipolar junction transistor in voltage ramp triggering mode is studied in this paper. The static characteristics of a simulation model are compared with those of a sample device, and the dynamic switching characteristics of the sample device were tested. On the basis of a successful device with a nanosecond switching speed, its failure phenomenon in voltage ramp triggering mode was analyzed.
维普
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