Gate oxide degradation is a key reliability issue that limits the widespread applications of silicon carbide metal-oxide-semiconductor field-effect transistors(SiC MOSFETs), and online monitoring is an important means to improve the reliability of SiC MOSFETs as it can obtain the gate-oxide health status in real time. In this paper, an online monitoring method for SiC MOSFET gate-oxide health status based on gate reference voltage is proposed. The basic principle of using the gate reference voltage to monitor the gate-oxide health status is introduced in detail, and a gate reference voltage online extraction circuit is also put forward. The designed extraction circuit was verified by pulse tests, indicating that it can achieve online extraction. In addition, aging tests were conducted, and results verified that the proposed method can effectively monitor the gate oxide health status. The designed circuit can be integrated into gate driver without significantly increasing the system complexity.
维普
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