SiC MOSFET器件栅氧可靠性研究综述
Review on Gate Oxide Reliability of SiC MOSFET Devices
胡嘉豪 1王英伦 1代豪豪 1邓小川 1张波1
作者信息
- 1. 电子科技大学集成电路科学与工程学院,成都 610054
- 折叠
摘要
碳化硅金属氧化物半导体场效应晶体管SiC MOSFET(silicon carbide metal-oxide-semiconductor field effect transistor)因具有高压、高频、低导通损耗等优异特性而获得产业界广泛关注,但相比于硅基IGBT,SiC/SiO2栅氧界面高缺陷密度引起的栅氧可靠性问题成为制约SiC MOSFET器件规模化应用的关键瓶颈.通过对近年来国内外SiC MOSFET栅氧可靠性研究成果的梳理和分析,阐述了当前栅氧可靠性问题的形成原因,归纳总结了各类常用的栅氧可靠性评估方法,并进行了比较分析,最后重点探讨了极端工况下SiC MOSFET栅氧可靠性及其提升技术的发展现状.
Abstract
Silicon carbide metal-oxide-semiconductor field effect transistor(SiC MOSFET)has attracted attention from the industry owing to its excellent characteristics such as high voltage,high frequency and low conduction loss.However,compared with the silicon-based IGBT,the problem of gate oxide reliability caused by the high defect density at the SiC/SiO2 gate oxide interface has become a key bottleneck restricting the large-scale applications of SiC MOSFET devices.By sorting out and analyzing the research results of the gate oxide reliability of SiC MOSFET at home and abroad in recent years,the causes of the gate oxide reliability problems at present were elaborated upon,and various commonly-used gate oxide reliability evaluation methods were summarized and compared.Finally,the gate oxide reliability of SiC MOSFET under extreme operating conditions and the development status of technologies for improving its performance were discussed.
关键词
碳化硅金属氧化物半导体场效应晶体管/栅氧可靠性/评估方法/极端工况Key words
Silicon carbide metal-oxide-semiconductor field effect transistor(SiC MOSFET)/gate oxide reliability/evaluation method/extreme operating condition引用本文复制引用
出版年
2024
国家科技期刊平台
NSTL
万方数据