一种用于改善IGBT开关过冲的主动栅极控制技术
Active Gate Control Technology for Improving Switching Overshoots of IGBTs
谢海超 1王学梅1
作者信息
- 1. 华南理工大学电力学院,广州 510640
- 折叠
摘要
绝缘栅双极型晶体管IGBT(insulated gate bipolar transistor)的广泛应用对其开关性能提出了很高的要求,传统的栅极驱动CGD(conventional gate drive)对IGBT开关过程中的电压和电流过冲调节效果有限,主要因其降低过冲总是以牺牲开关时间和开关损耗为代价.基于此,提出 1 种新的主动栅极驱动AGD(active gate drive)控制方法,用于抑制IGBT开关过程中产生的电流和电压过冲,其原理是在IGBT高di/dt和dv/dt阶段主动调节驱动电压,减小电流和电压的变化率,从而抑制电流和电压过冲.实验结果表明,相比传统驱动方法,所提方法可在基本不降低开关速度和不增加开关损耗的同时,显著降低IGBT开关过程中的电流和电压过冲.
Abstract
The wide applications of insulated gate bipolar transistors(IGBTs)pose high requirements for their switching performance.However,the conventional gate drive(CGD)has limited regulation effect on voltage and current overshoots in the switching process of IGBTs,because it always sacrifices the switching time and switching loss while reducing overshoots.A novel active gate drive(AGD)control method is proposed to suppress the current and voltage overshoots generated in the switching process of IGBTs,i.e.,the driving voltage at the high di/dt and dv/dt stages of IGBTs is adjusted to reduce the changing rates of current and voltage,so as to suppress the current and voltage overshoots.Experimental results show that compared with the conventional driving methods,the proposed method can significantly reduce the current and voltage overshoots in the switching processes of IGBTs without reducing the switching speed or increasing the switching loss.
关键词
绝缘栅双极型晶体管/主动栅极驱动/电压和电流过冲Key words
Insulated gate bipolar transistor(IGBT)/active gate drive(AGD)/voltage and current overshoots引用本文复制引用
出版年
2024
国家科技期刊平台
NSTL
万方数据