Analytical RE EMI Model Considering Nonlinear Characteristics of Junction Capacitor and Transconductor
陈雯霞 1陈文洁 1程睿 1王红彭 1霍永琪 1吴恢斌1
扫码查看
点击上方二维码区域，可以放大扫码查看
作者信息
1. 西安交通大学电气工程学院,西安710000
折叠
摘要
宽禁带WBG(wide band gap)半导体电力电子器件由于其开关频率高、开关速度快、寄生参数大等特点从噪声源头引发了越来越严峻的电磁干扰问题.然而,传统的噪声源研究主要集中在30 MHz传导频段以内,如何评估噪声源在30～300 MHz较高频率范围内的辐射频段产生的影响仍存在不确定性,因此提出1种改进的WBG器件电磁干扰分析模型,与传统的非对称梯形波电磁干扰模型相比,首次详细考虑了WBG器件的结电容和跨导体的非线性特性,评估了非线性参数对辐射频段噪声的影响,并进一步提出该模型在辐射频段噪声源抑制中的应用.仿真结果验证了所提计算方法的准确性,基于SiC器件的硬件测试结果与理论分析相吻合.
Abstract
Nowadays,wide band gap(WBG) semiconductor power electronic devices have caused increasingly serious electromagnetic interference(EMI) problems as noise sources due to their high switching frequency,fast switching speed and large parasitic parameters. However,the conventional study on noise sources mainly focused on the conduction emission frequency range within 30 MHz,and how to evaluate the impact of noise sources within the radiated emission frequency range(30-300 MHz) still remains uncertain. Therefore,an enhanced analytical EMI model for WBG devices is proposed. Compared with the conventional asymmetric trapezoidal wave EMI model,the proposed model takes into account the nonlinear characteristics of junction capacitor and transconductor in WBG devices in detail for the first time. The impact of nonlinear parameters on noises within the radiated emission frequency range is evaluated,and the application of the proposed model to the suppression of noise sources in this frequency range is further put forward. Simulation results demonstrated the accuracy of the proposed calculation method,and the results of hardware tests based on SiC devices were consistent with the theoretical analysis.
关键词
结电容/跨导/电磁干扰/开关模型
Key words
Junction capacitor/transconductor/electromagnetic interference(EMI)/switching model
维普
万方数据