With the development of industrial demand,higher requirements are put forward for the reliability of power transistors. The real-time measurement of device junction temperature can ensure the normal operation of the device,so it is very important. Through the research on the on-line measurement method for turn-on delay time,a measurement circuit is designed. By measuring the turn-on delay time at different junction temperatures,the relationship between them is established,the on-line measurement of device junction temperature is realized by measuring the turn-on delay time under actual working conditions,and the device junction temperature is deduced. The results measured using the proposed method are similar to those obtained by an infrared temperature gun. In this way,an on-line measurement method for MOSFET junction temperature based on turn-on delay time is proposed,providing a new idea for the on-line measurement of junction temperature in the future.
关键词
结温/热敏电参数/开通延迟时间
Key words
Junction temperature/thermistor parameter/turn-on delay time
维普
万方数据